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FTC41041 Datasheet(PDF) 3 Page - Force Technologies Ltd

Part # FTC41041
Description  HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM
PDF  11 Pages
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Manufacturer  FORCE [Force Technologies Ltd]
Direct Link   https://www.forcetechnologies.co.uk
Logo FORCE - Force Technologies Ltd

FTC41041 Datasheet(HTML) 3 Page - Force Technologies Ltd

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*V
CC = 3.6V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL, OE = VIH.
POWER DISSIPATION CHARACTERISTICS VS. SPEED
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(V
CC = 5.0V ± 10%, All Temperature Ranges)
(2)
Sym
Parameter
Temperature Range
-10
-12
-15
-20
Unit
I
CC
Dynamic Operating Current*
Commercial
100
90
80
70
mA
Industrial
100
90
80
70
mA
Military
N/A
110
100
90
mA
Sym
Parameter
-10
-12
-15
-20
Unit
Min
Max
Min
Max
Min
Max
Min
Max
t
RC
Read Cycle Time
10
12
15
20
ns
t
AA
Address Access Time
10
12
15
20
ns
t
AC
Chip Enable Access Time
10
12
15
20
ns
t
OH
Output Hold from Address Change
3
3
3
3
ns
t
LZ
Chip Enable to Output in Low Z
3
3
3
3
ns
t
HZ
Chip Disable to Output in High Z
5
6
7
8
ns
t
OE
Output Enable Low to Data Valid
5
6
7
8
ns
t
OLZ
Output Enable Low to Low Z
0
0
0
0
ns
t
OHZ
Output Enable High to High Z
5
6
7
8
ns
t
PU
Chip Enable to Power Up Time
0
0
0
0
ns
t
PD
Chip Disable to Power Down Time
10
12
15
20
ns
t
BE
Byte Enable to Data Valid
5
6
7
8
ns
t
LZBE
Byte Enable to Low Z
0
0
0
0
ns
t
HZBE
Byte Disable to High Z
6
6
7
8
ns
FTC41041
HIGH SPEED 256K x 16 (4 MEG)
STATIC CMOS RAM
2013
3 of 11
Rev C



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