MMRF1013H datasheet(2/16 Pages) NXP

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RF Device Data

Freescale Semiconductor, Inc.

MMRF1013HR5 MMRF1013HSR5

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

Table 4. Electrical Characteristics (TA =25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics (1)

Gate--Source Leakage Current

(VGS =5 Vdc, VDS =0 Vdc)

IGSS

—

Adc

Zero Gate Voltage Drain Leakage Current

(VDS =30 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Zero Gate Voltage Drain Leakage Current

(VDS =65 Vdc, VGS =0 Vdc)

IDSS

—

Adc

On Characteristics

Gate Threshold Voltage (1)

(VDS =10 Vdc, ID = 345 Adc)

VGS(th)

1.0

1.9

2.5

Vdc

Gate Quiescent Voltage (2)

(VDD =30 Vdc, ID = 100 mAdc, Measured in Functional Test)

VGS(Q)

1.5

2.3

3.0

Vdc

Drain--Source On--Voltage (1)

(VGS =10 Vdc, ID =2 Adc)

VDS(on)

0.1

0.18

0.3

Vdc

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(VDS =30 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Crss

—

2.53

—

Output Capacitance

(VDS =30 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Coss

—

470

—

Input Capacitance

(VDS =30 Vdc, VGS =0 Vdc  30 mV(rms)ac @ 1 MHz)

Ciss

—

264

—

Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD =30 Vdc, IDQ = 100 mA, Pout = 320 W Peak (32 W Avg.),

f = 2900 MHz, 100 sec Pulse Width, 10% Duty Cycle

Power Gain

Gps

12.0

13.3

15.0

Drain Efficiency

D

47.0

50.5

—

Input Return Loss

IRL

—

--17

--9

Typical Pulse RF Performance (In Freescale 2x3 Compact Test Fixture, 50 ohm system) VDD =30 Vdc, IDQ = 100 mA, Pout = 320 W

Peak (32 W Avg.), 300 sec Pulse Width, 10% Duty Cycle

Frequency

Gps

(dB)

D

(%)

IRL

(dB)

2700 MHz

13.9

49.3

--11

2800 MHz

14.0

49.8

--18

2900 MHz

13.0

49.6

--15

1. Each side of device measured separately.

2. Measurement made with device in push--pull configuration.

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