MMRF1013H datasheet(1/16 Pages) NXP

Part #	MMRF1013H

Description	RF Power LDMOS Transistors

PDF	16 Pages

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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MMRF1013HR5 MMRF1013HSR5

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

RF power transistors designed for aerospace and defense S--band radar

pulse applications operating at frequencies between 2700 and 3200 MHz.

 Typical Pulse Performance: VDD =30 Vdc,IDQ = 100 mA

Signal Type

Pout

(W)

f

(MHz)

Gps

(dB)

D

(%)

IRL

(dB)

Pulse (100 sec,

10% Duty Cycle)

320 Peak

2900

13.3

50.5

--17

 Capable of Handling 10:1 VSWR @ 32 Vdc, 2900 MHz, 320 W Peak Power,

300 sec, 10% Duty Cycle (3 dB Input Overdrive from Rated Pout)

Features

 Characterized with Series Equivalent Large--Signal Impedance Parameters

 Internally Matched for Ease of Use

 Qualified Up to a Maximum of 32 VDD Operation

 Integrated ESD Protection

 Designed for Push--Pull Operation

 Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

 In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +65

Vdc

Gate--Source Voltage

VGS

--6.0, +10

Vdc

Storage Temperature Range

Tstg

-- 65 to +150

C

Case Operating Temperature

TC

150

C

Operating Junction Temperature (1,2)

TJ

225

C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (2,3)

Unit

Thermal Resistance, Junction to Case

Case Temperature 61C, 320 W Peak, 300 sec Pulse Width, 10% Duty Cycle, 100 mA, 2900 MHz

Case Temperature 69C, 320 W Peak, 500 sec Pulse Width, 20% Duty Cycle, 100 mA, 2900 MHz

ZJC

0.06

0.10

C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Document Number: MMRF1013H

Rev. 0, 7/2014

Freescale Semiconductor

Technical Data

2700--2900 MHz, 320 W, 30 V

PULSE S--BAND

RF POWER MOSFETs

MMRF1013HR5

MMRF1013HSR5

NI--1230H--4S

MMRF1013HR5

PARTS ARE PUSH--PULL

NI--1230S--4S

MMRF1013HSR5

Figure 1. Pin Connections

(Top View)

Drain A

31

42 Drain B

Gate A

Gate B

Note: The backside of the package is the

source terminal for the transistors.

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