1

Publication date: March 2004

SKD00061BED

Variable Capacitance Diodes

MA27331

Silicon epitaxial planar type

For VCO of a UHF radio

■ Features

• Good linearity of C − V curve

• Small series resistance r

D

• SSS-Mini type package, optimum for downsizing of equipment

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Rating

Unit

Reverse voltage

12

V

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

Marking Symbol: A

Unit: mm

1: Anode

2: Cathode

SSSMini2-F1 Package

5˚

0.27

2

1

+0.05

–0.02

0.10

+0.05

–0.02

■ Electrical Characteristics T

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current

10

nA

Diode capacitance

= 1 V, f = 1 MHz

17.0

20.0

pF

= 2 V, f = 1 MHz

14.0

15.0

16.0

10.0

12.4

= 10 V, f = 1 MHz

5.5

6.0

6.5

Capacitance ratio

1.53

1.60

1.83



2.25

2.50

2.75

= 9 pF, f = 470 MHz

0.18

0.22

Ω

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Absolute frequency of input and output is 470 MHz.

3. *: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER