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SCA-16 Datasheet(PDF) 1 Page - Stanford Microdevices |
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SCA-16 Datasheet(HTML) 1 Page - Stanford Microdevices |
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1 / 3 page ![]() Product Description Stanford Microdevices’ SCA-16 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Typical IP3 at 50mA is +28dBm. These unconditionally stable amplifiers provides 15dB of gain and +14.5dBm of 1dB compressed power and requires only a single positive voltage supply. Only 2 DC-blocking capaci- tors, a bias resistor and an optional inductor are needed for operation. This MMIC is an ideal choice for wireless applications such as cellular, PCS, CDPD, wireless data and SONET. SCA-16 DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier Product Features • High Output IP3 : +28dBm • Flat Gain : +/- 0.7dB Over Full Band • Cascadable 50 Ohm : 1.5:1 VSWR • Patented GaAsHBT Technology • Operates From Single Supply • Low Thermal Resistance Package Applications • Cellular, PCS, CDPD • Wireless Data, SONET S y m bol P a r a m e t e r s : T e s t C ondi t i ons : I d = 50m A , Z 0 = 50 O h m s Un i t s Mi n . Ty p . M ax. G P Po w e r G a i n f = 0. 1- 2. 0 G H z f = 2. 0- 3. 0 G H z dB dB 13 15 14 G F G a i n F l at nes s G a i n F l at nes s ov er an y 100 M H z band f = 0. 1- 2. 0 G H z dB dB +/ - 0 . 7 +/ - 0 . 1 P 1dB O u t put P o w e r at 1dB C o m p r e s s i o n f = 0. 1- 2. 0 G H z d B m 14. 5 NF No i s e F i g ur e f = 0. 1- 3. 0 G H z d B 5 . 5 V S W R I nput and O u t put V S W R f = 0. 1- 3. 0 G H z - 1. 5 IP 3 T h i r d O r der I n t e r c ept P o in t O u t put T one @ 0dB m 10 M H z A par t f = 0. 1- 2. 0 G H z d B m 28. 0 T D G r oup D e l a y f = 1. 9 G H z p s e c 100 I S O L R e v e r s e I s ol at i o n f = 0. 1- 3. 0 G H z d B 20 V D D e vi ce V o l t a g e V 3 .5 4 . 0 4 .5 dG / d T D ev i c e G a i n T e m per at ur e C o eff i c i ent dB / d e g C - 0. 0018 dV / d T D ev i c e V o l t a g e T e m per at ur e C oeff i c i ent m V / d e g C- 4 . 0 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com Electrical Specifications at Ta = 25C Output IP3 vs. Frequency 22 24 26 28 30 32 0.1 123 dBm GHz 5-149 |
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