MMRF2004NBR1

1

RF Device Data

Freescale Semiconductor, Inc.

RF LDMOS Wideband Integrated

Power Amplifier

The MMRF2004NB wideband integrated circuit is designed with on--chip

matching that makes it usable from 2300 to 2700 MHz. This multi--stage

structure is rated for 26 to 32 V operation and covers all typical cellular base

station modulation formats.

4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%

Probability on CCDF.

Power Gain — 28.5 dB

Power Added Efficiency — 17%

Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF

ACPR @ 8.5 MHz Offset — --50 dBc in 1 MHz Channel Bandwidth

Driver Applications

4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%

Probability on CCDF.

Power Gain — 27.8 dB

Power Added Efficiency — 3.2%

Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF

ACPR @ 8.5 MHz Offset — --56 dBc in 1 MHz Channel Bandwidth

 Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 40 W CW Output

≃ 25 W CW

Features

 100% PAR Tested for Guaranteed Output Power Capability

 Characterized with Series Equivalent Large--Signal Impedance Parameters

and Common Source S--Parameters

 On--Chip Matching (50 Ohm Input, DC Blocked)

 Integrated Quiescent Current Temperature Compensation with

 Integrated ESD Protection

 225C Capable Plastic Package

 In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel.

1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current

Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977

or AN1987.

MMRF2004NBR1

2500--2700 MHz, 4 W AVG., 28 V

WiMAX

RF LDMOS WIDEBAND

INTEGRATED POWER AMPLIFIER

TO--272WB--16

PLASTIC

Document Number: MMRF2004NB

Rev. 0, 12/2013

Freescale Semiconductor

Technical Data

Figure 1. Functional Block Diagram

Quiescent Current

(Top View)

Figure 2. Pin Connections

Note: Exposed backside of the package is

the source terminal for the transistors.

GND

NC

GND

GND

1

2

3

4

5

6

7

8

16

15

14

13

12

9

10

GND

11

NC

NC

NC

NC

NC

 Freescale Semiconductor, Inc., 2013. All rights reserved.