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AFV141KGS Datasheet(PDF) 4 Page - NXP Semiconductors |
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AFV141KGS Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 15 page ![]() 4 RF Device Data Freescale Semiconductor, Inc. AFV141KH AFV141KHS AFV141KGS TYPICAL CHARACTERISTICS 50 020 10 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 2. Capacitance versus Drain--Source Voltage 30 10 1 40 Crss 100 Measured with 30 mV(rms) ac @ 1 MHz VGS =0 Vdc IDQ(A+B) = 100 mA Figure 3. Normalized VGS versus Quiescent Current and Case Temperature TC, CASE TEMPERATURE (C) 1.06 1.04 1.02 1 0.98 0.96 0.94 100 –50 0 –25 25 50 75 500 mA 1500 mA 2500 mA VDD =50 Vdc 100 –2.06 IDQ (mA) Slope (mV/C) 500 –1.96 1500 –1.94 2500 –1.72 0.92 1.08 300 Note: Each side of device measured separately. |
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