AFV141KH AFV141KHS AFV141KGS

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power LDMOS Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

These RF power devices are designed for commercial applications operating

at frequencies from 1200 to 1400 MHz such as commercial L--Band radars. The

devices are suitable for use in pulse applications.

Frequency

(MHz)

Signal Type

(W)

(dB)

(%)

1200

Pulse

(300 sec, 12% Duty Cycle)

950 Peak

15.8

46.5

1300

1120 Peak

16.5

47.5

1400

1000 Peak

16.1

46.6

Load Mismatch/Ruggedness

Frequency

(MHz)

Signal Type

VSWR

(W)

Test

Voltage

Result

Pulse

(128 sec,

10% Duty Cycle)

> 20:1 at

All Phase

Angles

31.6 Peak

(3 dB

Overdrive)

50

No Device

Degradation

1. Measured in 1400 MHz narrowband production circuit.

Features

 Internally Input and Output Matched for Broadband Operation and Ease of Use

 Device Can Be Used in a Single--Ended, Push--Pull or Quadrature

Configuration

 High Ruggedness, Handles > 20:1 VSWR

 Integrated ESD Protection with Greater Negative Voltage Range for Improved

Class C Operation and Gate Voltage Pulsing

 Characterized with Series Equivalent Large--Signal Impedance Parameters

Typical Applications

 Commercial L--Band Radar Systems

Document Number: AFV141KH

Rev. 0, 4/2016

Freescale Semiconductor

Technical Data

1200–1400 MHz, 1000 W PEAK, 50 V

AIRFAST RF POWER LDMOS

TRANSISTORS

AFV141KH

AFV141KHS

AFV141KGS

(Top View)

Drain A

31

Figure 1. Pin Connections

42 Drain B

Gate A

Gate B

NI--1230GS--4L

AFV141KGS

NI--1230S--4S

AFV141KHS

NI--1230H--4S

AFV141KH

Note: The backside of the package is the

source terminal for the transistor.

 Freescale Semiconductor, Inc., 2016. All rights reserved.