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BGS8L5 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BGS8L5 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 15 page ![]() NXP Semiconductors BGS8L5 SiGe:C low-noise amplifier MMIC with bypass switch for LTE BGS8L5 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved. Product data sheet Rev. 1 — 2 March 2018 2 / 15 3 Applications • LNA for LTE reception in smart phones • feature phones • tablet PCs • RF front-end modules 4 Quick reference data Table 1. Quick reference data f = 882 MHz; VCC = 2.8 V; VI(CTRL) > 0.8 V; Tamb = 25 °C. Input matched to 50 Ω using application diagram from Figure 3 and component values as in Table 10. Unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit in gain mode - 4.9 6.0 mA ICC supply current in bypass mode - - 1 μA in gain mode - 13.7 - dB Gp power gain in bypass mode - −2.1 - dB NF noise figure [1] - 0.8 - dB Pi(1 dB) input power at 1 dB gain compression - −4.5 - dBm IP3i input third-order intercept point Δf = 1 MHz - −1.0 - dBm [1] PCB losses are subtracted 5 Ordering information Table 2. Ordering information Type number Package Name Description Version BGS8L5 XSON6 plastic extremely thin small outline package: no leads; 6 terminals; body 1.1. x 0.7 x 0.37 mm SOT1232 |
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