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BGS8L5 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BGS8L5
Description  SiGe:C low-noise amplifier MMIC with bypass switch for LTE
PDF  15 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

BGS8L5 Datasheet(HTML) 2 Page - NXP Semiconductors

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NXP Semiconductors
BGS8L5
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
BGS8L5
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2018. All rights reserved.
Product data sheet
Rev. 1 — 2 March 2018
2 / 15
3 Applications
• LNA for LTE reception in smart phones
• feature phones
• tablet PCs
• RF front-end modules
4 Quick reference data
Table 1. Quick reference data
f = 882 MHz; VCC = 2.8 V; VI(CTRL) > 0.8 V; Tamb = 25 °C. Input matched to 50 Ω using application diagram from Figure 3 and
component values as in Table 10. Unless otherwise specified.
Symbol
Parameter
Conditions
Min Typ Max Unit
in gain mode
-
4.9
6.0
mA
ICC
supply current
in bypass mode
-
-
1
μA
in gain mode
-
13.7 -
dB
Gp
power gain
in bypass mode
-
−2.1 -
dB
NF
noise figure
[1] -
0.8
-
dB
Pi(1 dB)
input power at 1 dB gain
compression
-
−4.5 -
dBm
IP3i
input third-order intercept point
Δf = 1 MHz
-
−1.0 -
dBm
[1]
PCB losses are subtracted
5 Ordering information
Table 2. Ordering information
Type number
Package
Name
Description
Version
BGS8L5
XSON6
plastic extremely thin small outline package: no leads; 6
terminals; body 1.1. x 0.7 x 0.37 mm
SOT1232



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