NXP Semiconductors

BGS8L5

SiGe:C low-noise amplifier MMIC with bypass switch for LTE

BGS8L5

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2018. All rights reserved.

Product data sheet

Rev. 1 — 2 March 2018

12 / 15

15 Handling information

Table 11. Caution

msc896

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST

61340-5, JESD625-A or equivalent standards.

16 Abbreviations

Table 12. Abbreviations

Acronym

Description

ESD

ElectroStatic Discharge

HBM

Human Body Model

MMIC

Monolithic Microwave Integrated Circuit

MUF

Molded Underfill

LTE

Long-Term Evolution

PCB

Printed-Circuit Board

SiGe:C

Silicon Germanium Carbon

17 Revision history

Table 13. Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

BGS8L5 v.1

20180302

product data sheet

-

-