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NXP Semiconductors

BGS8M2

SiGe:C low-noise amplifier MMIC with bypass switch for LTE

BGS8M2

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2018. All rights reserved.

Product data sheet

Rev. 4 — 13 June 2018

COMPANY CONFIDENTIAL

9 / 15

Symbol Parameter

Conditions

Min Typ Max Unit

f = 1843 MHz

[1][2][5] -

0.80 1.4

dB

f = 1960 MHz

[1][3][5] -

0.85 1.4

dB

NF

noise figure

f = 2140 MHz

[1][4][5] -

0.95 1.5

dB

f = 1843 MHz

[1][2] -7.5 -3.5 -

dBm

f = 1960 MHz

[1][3] -7.5 -3.5 -

dBm

input power at 1 dB gain

compression

f = 2140 MHz

[1][4] -6.5 -2.5 -

dBm

f = 1843 MHz

[1][2] -2.5 +2.5 -

dBm

f = 1960 MHz

[1][3] -1.5 +3.5 -

dBm

input third-order intercept point

f = 2140 MHz

[1][4] -1.0 +4.0 -

dBm

K

Rollett stability factor

1

-

-

turn-on time

-

-

1.3

µs

turn-off time

-

-

0.3

µs

Bypass mode

supply current

-

-

1

µA

f = 1843 MHz

[1][2] -3.6 -2.1 -0.6 dB

f = 1960 MHz

[3] -4.0 -2.2 -0.7 dB

power gain

f = 2140 MHz

[1][4] -4.0 -2.5 -1.0 dB

f = 1843 MHz

[2] -

12

-

dB

f = 1960 MHz

[3] -

11

-

dB

input return loss

f = 2140 MHz

[4] -

10

-

dB

f = 1843 MHz

[2] -

10

-

dB

f = 1960 MHz

[3] -

10

-

dB

output return loss

f = 2140 MHz

[4] -

9

-

dB

[1]

Guaranteed by device design; not tested in production.

[2]

E-UTRA operating band 3 (1805 MHz to 1880 MHz).

[3]

E-UTRA operating band 2 (1930 MHz to 1990 MHz).

[4]

E-UTRA operating band 1 (2110 MHz to 2170 MHz).

[5]

PCB losses are subtracted.