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FML10 Datasheet(PDF) 2 Page - Rohm

Part # FML10
Description  General purpose transistor (isolated transistor and diode)
PDF  5 Pages
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

FML10 Datasheet(HTML) 2 Page - Rohm

  FML10 Datasheet HTML 1Page - Rohm FML10 Datasheet HTML 2Page - Rohm FML10 Datasheet HTML 3Page - Rohm FML10 Datasheet HTML 4Page - Rohm FML10 Datasheet HTML 5Page - Rohm  
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FML10
Transistors
Rev.B
2/4
Absolute maximum ratings (Ta=25
°C)
Tr1
Parameter
Symbol
Unit
∗
VCBO
V
Collector-base voltage
VCEO
V
Collector-emitter voltage
VEBO
V
Emitter-base voltage
IC
A
ICP
A
Collector current
PC
mW
Power dissipation
Tj
°C
Junction temperature
Tstg
Limits
15
12
6
1.5
3
200
150
−40 to +125
°C
Range of storage temperature
∗Single pulse, PW=1ms
Di2
Parameter
Symbol
IF
IFSM
VR
Tj
Tstg
Limits
700
3
20
125
Unit
mA
A
V
°C
°C
−40 to +125
Junction temperature
Range of storage temperature
Reverse voltage (DC)
VRM
25
V
Reak reverse voltage
Forward current surge peak (60HZ, 1
∞)
Average rectified forward current
Electrical characteristics (Ta=25
°C)
Tr1
Parameter
Symbol
Min.
Typ. Max.
Unit
Conditions
15
−−
V
IC
=10µA
Collector-base breakdown voltage
BVCBO
12
−−
V
IC
=1mA
Collector-emitter breakdown voltage
BVCEO
6
−−
V
IE
=10µA
Emitter-base breakdown voltage
BVEBO
−−
100
nA
VCB
=15V
Collector cutoff current
ICBO
Emitter cutoff current
−−
100
nA
VEB
=6V
IEBO
−
85
200
mV
IC/IB
=500mA/25mA
Collector-emitter saturation voltage
VCE(sat)
270
−
680
−
VCE/IC
=2V/200mA
DC current gain
hFE
−
400
−
MHz VCE
=2V, IE= −200mA, f=100MHz
Transition frequency
fT
−
12
−
pF
VCB
=10V, IE=0A, f=1MHz
Collector output capacitance
Cob
∗
∗
∗Pulsed
Di2
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
−
490
VF
−
mV
IF
=700mA
VR
=20V
IR
−−
200
µA
Forward voltage
Reverse current



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