STP20N20 datasheet(2/13 Pages) STMICROELECTRONICS

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STP20N20 - STF20N20 - STD20N20

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Table 3: Absolute Maximum ratings

( ) Pulse width limited by safe operating area

(1) ISD ≤ 18A, di/dt ≤ 400A/µs, VDD ≤ V(BR)DSS

Table 4: Thermal Data

(#) When mounted on 1inch² FR-4, 2 Oz copper board.

Table 5: Avalanche Characteristics

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 6: On/Off

Symbol

Parameter

Value

Unit

TO-220/DPAK

TO-220FP

VDS

Drain-source Voltage (VGS = 0)

200

VDGR

Drain-gate Voltage (RGS = 20 kΩ)200

VGS

Gate- source Voltage

± 20

Drain Current (continuous) at TC = 25°C18

Drain Current (continuous) at TC = 100°C11

IDM ( )

Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C90

Derating Factor

0.72

0.2

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

V/ns

Tstg

Operating Junction Temperature

Storage Temperature

-50 to 150

°C

TO-220

DPAK

TO-220FP

Rthj-case

Thermal Resistance Junction-case Max

1.38

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

50(#)

62.5

°C/W

Maximum Lead Temperature For Soldering

Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

110

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 1 mA, VGS = 0

200

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20V

±100

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID = 10 A

0.10

0.125

Ω

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