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STP20N20 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STP20N20
Description  N-CHANNEL 200V - 0.10 OHM - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET II MOSFET
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP20N20 Datasheet(HTML) 3 Page - STMicroelectronics

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STP20N20 - STF20N20 - STD20N20
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS = 25 V, ID= 10 A
13
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
940
197
30
pF
pF
pF
td(on)
tr
td(off)
tr
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 100 V, ID = 10 A,
RG= 4.7 Ω VGS = 10 V
(see Figure 17)
15
30
40
10
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 160V, ID = 20 A,
VGS = 10V
(see Figure 20)
28
5.6
14.5
39
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
18
72
A
A
VSD (1)
Forward On Voltage
ISD = 20 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 20 A, di/dt = 100A/µs
VDD = 50V, Tj = 25°C
(see Figure 18)
155
775
10
ns
nC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 20 A, di/dt = 100A/µs
VDD = 50V, Tj = 150°C
(see Figure 18)
183
1061
11.6
ns
nC
A



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