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BB170 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BB170 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page ![]() BB170 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 1 — 25 March 2013 2 of 8 NXP Semiconductors BB170 VHF variable capacitance diode 4. Marking 5. Limiting values 6. Characteristics [1] See Figure 2. [2] See Figure 1 and Figure 3. Table 3. Marking Type number Marking code BB170 4H Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage - 30 V IF forward current - 20 mA Tstg storage temperature 55 +150 C Tj junction temperature 55 +125 C Table 5. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit IR reverse current VR =30V [1] -- 10 nA VR =30V; Tj =85 C [1] -- 200 nA rs diode series resistance f = 100 MHz; Cd =12pF - - 0.9 Cd diode capacitance f = 1 MHz [2] VR = 1 V 36.8 - 41.8 pF VR = 28 V 2.4 2.6 2.75 pF Cd(1V)/Cd(28V) diode capacitance ratio (1 Vto28V) f = 1 MHz 14.5 15 - |
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