VUI72-16NOXT

V

=

V

kA²s

kA²s

kA²s

kA²s

Symbol

Definition

Ratings

typ.

max.

I

R

V

I

A

V

F

1.10

R

1.1

K/W

R

min.

75

V

40

T

= 25°C

VJ

T

=

°C

VJ

mA

1.5

V

=

V

R

T

= 25°C

VJ

I =

A

F

V

T =

°C

C

110

P

tot

110

W

T

= 25°C

C

R

K/W

0.3

25

1600

max. non-repetitive reverse blocking voltage

reverse current

forward voltage drop

total power dissipation

Conditions

Unit

1.38

T

= 25°C

VJ

150

V

F0

V

0.79

T

=

°C

VJ

150

7.7

mΩ

V

1.01

T

=

°C

VJ

I =

A

F

V

25

1.37

I =

A

F

75

I =

A

F

75

threshold voltage

slope resistance

for power loss calculation only

µA

125

V

1600

max. repetitive reverse blocking voltage

T

= 25°C

VJ

19

junction capacitance

V =

V;

400

T

= 25°C

f = 1 MHz

R

VJ

pF

I

FSM

t = 10 ms; (50 Hz), sine

T

= 45°C

VJ

max. forward surge current

T

=

°C

VJ

150

I²t

T

= 45°C

value for fusing

T

=

°C

150

V

= 0 V

R

V

= 0 V

R

V

= 0 V

V

= 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ

R

VJ

R

T

=

°C

VJ

150

600

650

1.30

1.26

A

A

A

A

510

550

1.80

1.76

1600

DAV

d =

rectangular

⅓

bridge output current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Rectifier

1700

IXYS reserves the right to change limits, conditions and dimensions.

20151102d

Data according to IEC 60747and per semiconductor unless otherwise specified

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