MHT1001H datasheet(2/10 Pages) NXP

2 / 10 page

RF Device Data

Freescale Semiconductor, Inc.

MHT1001HR5

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

III

Table 4. Electrical Characteristics (TC =25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics (1)

Zero Gate Voltage Drain Leakage Current

(VDS =68 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Zero Gate Voltage Drain Leakage Current

(VDS =28 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Gate--Source Leakage Current

(VGS =5 Vdc, VDS =0 Vdc)

IGSS

—

Adc

On Characteristics

Gate Threshold Voltage (1)

(VDS =10 Vdc, ID = 200 Adc)

VGS(th)

Vdc

Gate Quiescent Voltage (3)

(VDD =28 Vdc, ID = 1900 mAdc, Measured in Functional Test)

VGS(Q)

2.8

Vdc

Drain--Source On--Voltage (1)

(VGS =10 Vdc, ID =2.2 Adc)

VDS(on)

0.1

0.21

0.3

Vdc

Dynamic Characteristics (1,2)

Reverse Transfer Capacitance

(VDS =28 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Crss

—

1.5

—

Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 1900 mA, Pout = 40 W Avg., f = 2390 MHz, 2--Carrier

W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in

3.84 MHz Bandwidth @ 10 MHz Offset. Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain

Gps

Drain Efficiency

D

23.5

—

Intermodulation Distortion

IM3

—

--37.5

--35

dBc

Adjacent Channel Power Ratio

ACPR

—

--41

--38

dBc

Input Return Loss

IRL

—

--13

—

1. Each side of device measured separately.

2. Part internally matched both on input and output.

3. Measurement made with device in push--pull configuration.

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