MHT1001HR5

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

RF power transistor suitable for industrial heating applications operating at

2450 MHz. Device is capable of both CW and pulse operation.

Power Gain — 13.2 dB

Drain Efficiency — 46.2%

 Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 W CW

Output Power

Features

 Characterized with Series Equivalent Large--Signal Impedance Parameters

 Internally Matched for Ease of Use

 Integrated ESD Protection

 In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

--0.5, +68

Vdc

Gate--Source Voltage

--0.5, +12

Vdc

Storage Temperature Range

-- 65 to +150

C

Case Operating Temperature

150

C

225

C

Derate above 25C

CW

110

1.34

W

W/C

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

0.22

C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.

Document Number: MHT1001H

Rev. 0, 5/2014

Freescale Semiconductor

Technical Data

MHT1001HR5

2450 MHz, 190 W CW, 28 V

INDUSTRIAL HEATING, RUGGED

RF POWER LDMOS TRANSISTOR

NI--1230H--4S

(Top View)

Drain A

31

Figure 1. Pin Connections

42 Drain B

Gate A

Gate B

Note: The backside of the package is the

source terminal for the transistors.

 Freescale Semiconductor, Inc., 2014. All rights reserved.