1

Transistor

2SC1215

Silicon NPN epitaxial planer type

For high-frequency (VHF band) amplification and oscillation

q

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Emitter

2:Collector

3:Base

JEDEC:TO–92

EIAJ:SC–43A

5.0

±0.2

4.0

±0.2

0.45

+0.2

–0.1

0.45

+0.2

–0.1

1.27

1.27

2.54

±0.15

2

13

Symbol

Ratings

30

20

3

50

400

150

–55 ~ +150

Unit

V

V

V

mA

mW

˚C

˚C

Parameter

Collector to base voltage

Emitter to base voltage

Forward current transfer ratio

Base to emitter voltage

Collector to emitter saturation voltage

Common emitter reverse transfer capacitance

Transition frequency

Power gain

Base time constant

Symbol

*

PG

Conditions

min

30

3

25

600

typ

0.72

0.1

1

1200

20

max

1.5

1600

25

Unit

V

V

V

V

pF

MHz

dB

ps

Rank

T

S

600 ~ 1300

900 ~ 1600