RU1HP60S-R datasheet(2/8 Pages) RUICHIPS

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RU1HP60S

t i

l Ch

t i ti

Min.

Typ.

Max.

BVDSS

Drain-Source Breakdown Voltage

-100

Static Characteristics

VGS=0V, IDS=-250µA

100V V

Symbol

Parameter

Test Condition

RU1HP60S

Unit

Electrical Characteristics (T

C=25°C Unless Otherwise Noted)

-1

TJ=125°C

-30

VGS(th)

Gate Threshold Voltage

-2

-4

IGSS

Gate Leakage Current

±100

RDS(ON)

④

Drain-Source On-state Resistance

mΩ

VDS=VGS, IDS=-250µA

IDSS

Zero Gate Voltage Drain Current

VDS=-100V, VGS=0V

µA

VGS=±25V, VDS=0V

VGS=-10V, IDS=-60A

VSD

④

Diode Forward Voltage

-1.5

trr

Reverse Recovery Time

175

Qrr

Reverse Recovery Charge

620

ISD=-30A, VGS=0V

ISD=-60A, dlSD/dt=100A/µs

Dynamic Characteristics

⑤

Diode Characteristics

Gate Resistance

Ω

Ciss

Input Capacitance

4200

Coss

Output Capacitance

615

Crss

Reverse Transfer Capacitance

380

td(ON)

Turn-on Delay Time

VGS=0V,VDS=0V,F=1MHz

VGS=0V,

VDS=-50V,

Frequency=1.0MHz

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

145

Turn-off Fall Time

Total Gate Charge

164

VDD=-50V,IDS=-60A,

VGEN=-10V,RG=6Ω

Gate Charge Characteristics

⑤

Total Gate Charge

164

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

Notes:

VDS=-80V, VGS=-10V,

IDS=-60A

①

Pulse width limited by safe operating area.

②

Calculated continuous current based on maximum allowable junction temperature.

③

Limited by TJmax, IAS =-40A, VDD =-60V, RG = 50Ω, Starting TJ = 25°C.

③

Limited by TJmax, IAS 40A, VDD 60V, RG 50Ω, Starting TJ 25 C.

④

Pulse test;Pulse width≤300µs, duty cycle≤2%.

⑤

Guaranteed by design, not subject to production testing.

Ruichips Semiconductor Co., Ltd

Rev. B– AUG., 2014

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