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KT8232A1 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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KT8232A1 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website: www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor KT8232A1 ELECTRICAL CHARACTERISTICS T B C B =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ☆ VCEO(SUS) Collector-Emitter Sustaining Voltage IC B = 30mA 350 V VCE(sat) Collector-Emitter Saturation Voltage IC B = 8A; I B B = 0.1A 1.6 V VBE(sat) Base-Emitter Saturation Voltage IC B = 8A; I B B B = 0.1A 2 V ICEO Collector Cutoff Current V B CE B = 350V; I B B B = 0 V B CE B = 350V; I B B B = 0;T B C B =125℃ 0.1 0.5 mA IEBO Emitter Cutoff Current V B EB B = 5V; I B C B =0 10 mA h B FE DC Current Gain I B C B = 5A ; V B CE B = 5V 300 2000 |
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