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KT8232A1 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # KT8232A1
Description  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

KT8232A1 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website： www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
KT8232A1
DESCRIPTION
·
Built In Clamping Zener
·
High Operating Junction Temperature
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for use in automotive environment as
electronic ignition power actuators.
ABSOLUTE MAXIMUM RATINGS(T
B
a
B
=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
350
V
VCEO
Collector-Emitter Voltage
350
V
V
B
EBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
20
A
ICM
Collector Current-Peak
30
A
IB
Base Current
1
A
IBM
Base Current-Peak
5
A
PC
Collector Power Dissipation
@ T
B
C
B
=25℃
125
W
T
B
J
B
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
R
B
th j-c
B
Thermal Resistance, Junction to Case
1
℃
/W


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