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ZXCT1107Q Datasheet(PDF) 2 Page - Diodes Incorporated |
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ZXCT1107Q Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 17 page ![]() ZXCT1107Q/09Q/10Q Document number: DS37002 Rev. 3 - 2 2 of 17 www.diodes.com October 2018 © Diodes Incorporated ZXCT1107Q/09Q/10Q Pin Descriptions Package SOT23 SOT25 Description Name ZXCT1107Q ZXCT1109Q ZXCT1110Q OUT 1 1 3 Output pin (Note 5). Current output. S+ 3 2 4 This is the positive input of the current monitor and has a wide common-mode input range. This also acts as the analog supply and provides power to internal circuitry. The current through this pin varies with differential sense voltage. S- 2 3 5 This is the negative input of the current monitor and has a wide common-mode input range. GND — — 2 Ground pin and substrate connection. NC — — 1 No connection. Note: 5. For the ZXCT1107Q and ZXCT1109Q pin 1 (OUT) acts as both the output pin and substrate connection. This means that for the ZXCT1107Q and ZCT1109Q the minimum rail voltage that can be used is 2.5V + VOUT (see applications section for more details). Absolute Maximum Ratings Description Rating Unit Voltage on S- and S+ relative to OUT (ZXCT1107Q/09Q) -0.3 to 40 V Voltage on S- and S+ relative to GND (ZXCT1110Q) -0.3 to 40 V Voltage on OUT to GND (ZXCT1110Q) -0.3 to VS+ V Differential Sense Voltage, VSENSE (Notes 6 and 7) -0.3 to +0.8 V Maximum Current into S+ and S- (Note 7) ±8.5 mA Storage Temperature -55 to +150 °C Maximum Junction Temperature +150 °C Package Power Dissipation (TA = +25°C) SOT23 SOT25 300 (Derate to Zero at +150°C) 300 (Derate to Zero at +150°C) mW ESD Ratings ZXCT1107Q/09Q HBM Human Body Model 1,500 V MM Machine Model 150 V CDM Charged Device Model 1,000 V ZXCT1110Q HBM Human Body Model 1,000 V MM Machine Model 150 V CDM Charged Device Model 1,000 V Notes: 6. VSENSE = VS+ - VS-. 7. The differential input voltage limit, VS+ - VS-, may be exceeded provided that the input current limit into S+ or S- is not exceeded. Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only; functional operation of the device at conditions between maximum recommended operating conditions and absolute maximum ratings is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices.) |
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