IRF7329 datasheet(2/9 Pages) IRF

2 / 9 page

IRF7329

www.irf.com

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

p-n junction diode.

VSD

Diode Forward Voltage

-1.2

TJ = 25°C, IS = -2.0A, VGS = 0V

trr

Reverse Recovery Time

5075

TJ = 25°C, IF = -2.0A

Qrr

Reverse Recovery Charge

di/dt = -100A/µs

Source-Drain Ratings and Characteristics

-37

-2.0

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Notes:

Repetitive rating; pulse width limited by

max. junction temperature.

Pulse width £ 400µs; duty cycle £ 2%.

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

-12

VGS = 0V, ID = -250µA

DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient

0.007

V/°C Reference to 25°C, ID = -1mA

VGS = -4.5V, ID = -9.2A

VGS = -2.5V, ID = -7.4A

30VGS = -1.8V, ID = -4.6A

VGS(th)

Gate Threshold Voltage

-0.40 -0.90

VDS = VGS, ID = -250µA

gfs

Forward Transconductance

VDS = -10V, ID = -9.2A

-1.0VDS = -9.6V, VGS = 0V

-25

VDS = -9.6V, VGS = 0V, TJ = 70°C

Gate-to-Source Forward Leakage

-100

VGS = -8.0V

Gate-to-Source Reverse Leakage

100

VGS = 8.0V

Total Gate Charge

ID = -9.2A

Qgs

Gate-to-Source Charge

6.8

10nC

VDS = -6.0V

Qgd

Gate-to-Drain ("Miller") Charge

8.1

VGS = -4.5V

td(on)

Turn-On Delay Time

VDD = -6.0V

Rise Time

8.6

ID = -1.0A

td(off)

Turn-Off Delay Time

340

RD = 6.0W

Fall Time

260

VGS = -4.5V

Ciss

Input Capacitance

3450

VGS = 0V

Coss

Output Capacitance

1000

VDS = -10V

Crss

Reverse Transfer Capacitance

640

= 1.0

MHz

IGSS

µA

RDS(on)

Static Drain-to-Source On-Resistance

IDSS

Drain-to-Source Leakage Current

When mounted on 1 inch square copper board.

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