Parameter

Max.

Units

Drain- Source Voltage

-12

V

-9.2

-7.4

A

Pulsed Drain Current 

-37

Power Dissipation

ƒ

2.0

Power Dissipation

ƒ

1.3

Linear Derating Factor

16

mW/°C

Gate-to-Source Voltage

± 8.0V

Junction and Storage Temperature Range

-55 to + 150°C

01/29/04

www.irf.com

1

IRF7329

PD- 94095A

Absolute Maximum Ratings

W

Symbol

Parameter

Typ.

Max.

Units

Junction-to-Drain Lead

–––

20

Junction-to-Ambient

ƒ

–––

62.5

°C/W

Thermal Resistance

±

9.2A

-12V

±

7.4A

±

4.6A

Description

l

Trench Technology

l

Ultra Low On-Resistance

l

Dual P-Channel MOSFET

l

Low Profile (<1.8mm)

l

Available in Tape & Reel

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the ruggedized

device design that HEXFET Power MOSFETs are well

knownfor,providesthedesignerwithanextremelyefficient

and reliable device for use in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

powerapplications. Withtheseimprovements,multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infrared, or wave soldering techniques.

SO-8

D1

D1

D2

D2

G1

S2

G2

S1

Top View

8

1

2

3

4

5

6

7