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2SJ529S Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SJ529S Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc P-Channel MOSFET Transistor 2SJ529S ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= -10mA -60 V VGS(th) Gate Threshold Voltage VDS=-10V; ID=-1mA -1.0 -2.0 V RDS(on) Drain-Source On-Resistance VGS= -10V; ID=-5.0A 0.12 0.16 Ω IGSS Gate-Source Leakage Current VGS= ±16V;VDS= 0V ± 10 μ A IDSS Drain-Source Leakage Current VDS= -60V; VGS= 0V -100 μ A VSDF Diode forward voltage ISD=-10A, VGS = 0 V -1.2 V |
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