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CMBT5551 Datasheet(PDF) 1 Page - Continental Device India Limited |
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CMBT5551 Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page ![]() Continental Device India Limited Data Sheet Page 1 of 3 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) VCBO max. 180 V Collector–emitter voltage (open base) VCEO max. 160 V Collector current IC max. 600 mA Total power dissipation up to Tamb = 25 °C Ptot max 250 mW Junction temperature Tj max. 150 ° C Collector–emitter saturation voltage IC = 50 mA; IB = 5 mA VCEsat max. 0.2 V D.C. current gain IC = 10 mA; VCE = 5 V hFE min. 80 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) VCBO max. 180 V Collector–emitter voltage (open base) VCEO max. 160 V Emitter–base voltage (open collector) VEBO max. 6 V CMBT5551 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2 1 SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company |
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