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CMBT5551 Datasheet(PDF) 1 Page - Continental Device India Limited

Part # CMBT5551
Description  SILICON NPN HIGH-VOLTAGE TRANSISTOR
PDF  3 Pages
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Manufacturer  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

CMBT5551 Datasheet(HTML) 1 Page - Continental Device India Limited

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Continental Device India Limited
Data Sheet
Page 1 of 3
SILICON N–P–N HIGH–VOLTAGE TRANSISTOR
N–P–N transistor
Marking
CMBT5551 = G1
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
VCBO
max.
180 V
Collector–emitter voltage (open base)
VCEO
max.
160 V
Collector current
IC
max.
600 mA
Total power dissipation up to Tamb = 25 °C
Ptot
max
250 mW
Junction temperature
Tj
max.
150 ° C
Collector–emitter saturation voltage
IC = 50 mA; IB = 5 mA
VCEsat
max.
0.2 V
D.C. current gain
IC = 10 mA; VCE = 5 V
hFE
min.
80
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
VCBO
max.
180 V
Collector–emitter voltage (open base)
VCEO
max.
160 V
Emitter–base voltage (open collector)
VEBO
max.
6 V
CMBT5551
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
2
1
SOT-23 Formed SMD Package
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company


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