ACE160P17A datasheet(2/6 Pages) ACE

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ACE160P17A

P-Channel Enhancement Mode Field Effect Transistor

VER 1.1

Ordering information

ACE160P17A XX + H

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS = 0V, ID = -

250μA

-60

Zero Gate Voltage Drain Current

IDSS1

VDS = -48V, VGS = 0V

-1

μA

Gate Threshold Voltage

VGS(TH)

VGS = VDS , IDS= -

250μA

-1.5

-3.5

Gate Leakage Current

IGSS

VGS= ±20V , VDS=0V

±100

Drain-Source On-state

Resistance

RDS(on)

VGS = -10V , ID= -10A

125

mΩ

VGS = -4.5V , ID= -5A

123

160

Forward Trans Conductance

gFS

VDS= -5V , ID= -10A

Diode Forward Voltage

VSD

ISD= -1A , VGS= 0V

-1.2

Maximum Body-Diode

Continuous Current

-15

Switching

Total Gate Charge

VDS= -48V, ID= -2A,

VGS= -10V

15.8

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

3.5

Turn-on Delay Time

td( on )

VDD= -10V,ID= -1A,

VGS= -10V,RG= 6

Turn-on Rise Time

Turn-off Delay Time

td( off )

Turn-off Fall Time

Dynamic

Input Capacitance

Ciss

VDS=-30V,VGS= 0V,

f= 1.0MHz

987

Output Capacitance

Coss

114

Reverse Transfer Capacitance

Crss

YM：TO-252

Pb - free

Halogen - free

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