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ACE160P17A Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE160P17A Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 6 page ![]() ACE160P17A P-Channel Enhancement Mode Field Effect Transistor VER 1.1 1 Description The ACEA60P17A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or small power switching applications. Features VDS=-60V, ID =-17A RDS(ON) ≦125 mΩ@ V GS=-10V RDS(ON) ≦160 mΩ@ V GS=-4.5V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -60 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous)*AC TA=25℃ ID -17 A TA=100℃ -10 Drain Current (Pulsed)*B IDM -30 A Power Dissipation TA=25℃ PD 50 W Operating temperature / storage temperature TJ/TSTG -55~175 ℃ A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Packaging Type TO-252 |
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