ACE7323M datasheet(2/6 Pages) ACE

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ACE7323M

P-Channel 20-V (D-S) MOSFET

VER 1.1

Packaging Type

Ordering information

DFN3*3-8L

ACE7323M XX + H

Electrical Characteristics

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Gate Source Threshold Voltage

VGS(th)

VDS=VGS, ID=-250uA

-0.4

Gate Body Leakage

IGSS

VDS=0V, VGS=±8V

±100

Zero Gate Voltage Drain Current

IDSS

VDS=-16V, VGS=0V

-1

VDS=-16V, VGS=0V, TJ=55℃

-25

On-State Drain-Current

ID(on)

VDS=-5V, VGS=-4.5V

-25

Static Drain-Source On-Resistance

rDS(ON)

VGS=-4.5V,ID=-12.9A

9-12

VGS=-2.5V,ID=-10.4A

Forward Transconductance

gfS

VDS=-15V,ID=-12.9A

Diode Forward Voltage

VSD

IS=-2.6A ,VGS=0V

-0.66

Dynamic

Total Gate Charge

VDS=-10V, VGS=-4.5V,

ID=-12.9A

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDS=-10V, ,RL=0.8Ω

ID=-12.9A ,VGEN=-4.5V

RGEN=6Ω,

Rise Time

Turn-Off Delay Time

td(off)

326

Fall Time

133

Input Capacitance

Ciss

VDS=-15V, VGS=0V

f=1MHz

6507

Output Capacitance

Coss

570

Reverse Transfer Capacitance

Crss

512

Note:

a. Pulse test: PW <= 300us duty cycle <= 2%.

b. Guaranteed by design, not subject to production testing

NN : DFN3*3-8L

Pb - free

Halogen - free

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