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ACE7323M Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE7323M Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 6 page ![]() ACE7323M P-Channel 20-V (D-S) MOSFET VER 1.1 1 Description The ACE7323M uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a high side switch in SMPS and general purpose applications. Features Low rDS(on) trench technology Low thermal impedance Fast switching speed Applications Load Switches DC/DC Conversion Motor Drives Absolute Maximum Ratings Parameter Symbol Limit Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current a TA=25 OC ID -17 A TA=70 OC -12.2 Pulse Drain Current b IDM -60 Continuous Drain Current (Diode Continuous) a IS -5.1 A Power Dissipation a TA=25 OC PD 3.5 W TA=70 OC 2 Operating Junction and Storage Temperature Range TJ,TSTG -55 to 150 OC Parameter Symbol Maximum Units Maximum Junction-to-Ambient a t≦10sec RθJA 35 ℃/W Steady State 81 ℃/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRODUCT SUMMARY VDS (V) rDS(on) (mΩ) ID(A) -20 9 @ VGS = -4.5V -17 12 @ VGS = -2.5V -14 |
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