ACE13417B

P-Channel Enhancement Mode Power MOSFET

VER 1.1

2

Ordering information

ACE13417B XX + H

Electrical Characteristics

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

ON/OFF Characteristics

Drain-Source Breakdown

Voltage

V

(BR)DSS

V

-20

V

Zero Gate Voltage Drain

Current

I

DSS

V

-1

μA

Gate Threshold Voltage

V

GS(th)

V

-0.45

-0.7

-1

V

Gate Leakage Current

I

GSS

1 2V , V

±100

nA

Drain-Source On-state

Resistance

R

DS(on)

V

34

43

mΩ

mΩ

V

42

60

Forward Transconductance

6

S

Diode Forward Voltage

-1.2

V

Switching Characteristics

Total Gate Charge

Qg

8

nC

Gate-Source Charge

Qgs

1.6

nC

Gate-Drain Charge

Qgd

1.9

nC

Turn-on Delay Time

td ( on )

=10Ω I

6Ω

8

ns

Turn-on Rise Time

tr

12.8

ns

Turn-off Delay Time

td( off )

33

ns

Turn-off Fall Time

tf

18

ns

Dynamic Characteristics

Input Capacitance

Ciss

815

pF

Output Capacitance

Coss

145

pF

Reverse Transfer

Capacitance

Crss

110

pF

Note :

1.

Pulse width limited by maximum junction temperature.

2.

Pulse test: PW≤300μ s, duty cycle≤2%.

3.

For design AID only, not subject to production testing.

4.

Switching time is essentially independent of operating temperature.

BM : SOT23-3

Pb - free

Halogen - free