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ACE13417B Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE13417B Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 7 page  ACE13417B P-Channel Enhancement Mode Power MOSFET VER 1.1 1 Description The ACE13417B uses advanced trench technology to provide excellent RDS, low gate charge and operation with gate voltages as low as 2.5V.This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -20V,ID = -4.9A RDS(ON)=34m Ω @ VGS= -4.5V RDS(ON) =42mΩ @ VGS= -2.5V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Drain Current (Continuous) TA=25℃ ID -4.9 A TA=70℃ -3.9 Drain Current (Pulsed) IDM -19.7 A Power Dissipation TA=25℃ PD 1.6 W Operating temperature / storage temperature TJ/TSTG -55~150 ℃ Packaging Type SOT-23-3 Pin Configurations SOT-23-3 Description Function 1 G Gate 2 S Source 3 D Drain |
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