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LP9435LT3G Datasheet(PDF) 2 Page - Leshan Radio Company

Part # LP9435LT3G
Description  30V P-Channel Enhancement-Mode MOSFET
PDF  4 Pages
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Manufacturer  LRC [Leshan Radio Company]
Direct Link  http://www.lrc.cn/
Logo LRC - Leshan Radio Company

LP9435LT3G Datasheet(HTML) 2 Page - Leshan Radio Company

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LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID
-30
= -250uA
V
Drain-Source On-State Resistance
RDS(on)
VGS
D
70.0
= -4.5V, I = -4.2A
100.0
m
Ω
Drain-Source On-State Resistance
RDS(on)
VGS
D
50.0
= -10V, I = -5.3A
70.0
Gate Threshold Voltage
VGS(th)
VDS =VGS, ID
-1
= -250uA
-1.7
-3
V
Zero Gate Voltage Drain Current
IDSS
VDS
1
= -24V, VGS = 0V
uA
Gate Body Leakage
IGSS
VGS
±100
= ± 20V, VDS = 0V
nA
Forward Transconductance
gfs
VDS
D
10
= -10V, I = -5.3A
S
Dynamic
3)
Total Gate Charge
Qg
VDS =-15V, ID = -5.3A
VGS = -10V
28
nC
Gate-Source Charge
Qgs
3
Gate-Drain Charge
Qgd
7
Turn-On Delay Time
td(on)
VDD = -15V, RL = 15Ω
ID = -1A, VGEN = -10V
RG = 6
9
ns
Turn-On Rise Time
tr
15
Turn-Off Delay Time
td(off)
75
Turn-Off Fall Time
tf
40
Input Capacitance
Ciss
VDS = -15V, VGS = 0V
f = 1.0 MHz
745
pF
Output Capacitance
Coss
440
Reverse Transfer Capacitance
Crss
120
Source-Drain Diode
Max. Diode Forward Current
IS
-2.6
A
Diode Forward Voltage
VSD
IS
-1.3
= -2.6A, VGS = 0V
V
Note
:
Pulse test: pulse width <= 300us, duty cycle<= 2%
LP9435LT1G , S-LP9435LT1G
Rev .O 2/4



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