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IXBF20N360 Datasheet(PDF) 3 Page - IXYS Corporation

Part # IXBF20N360
Description  High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor
PDF  6 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXBF20N360 Datasheet(HTML) 3 Page - IXYS Corporation

  IXBF20N360 Datasheet HTML 1Page - IXYS Corporation IXBF20N360 Datasheet HTML 2Page - IXYS Corporation IXBF20N360 Datasheet HTML 3Page - IXYS Corporation IXBF20N360 Datasheet HTML 4Page - IXYS Corporation IXBF20N360 Datasheet HTML 5Page - IXYS Corporation IXBF20N360 Datasheet HTML 6Page - IXYS Corporation  
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© 2013 IXYS CORPORATION, All Rights Reserved
IXBF20N360
Fig. 1. Output Characteristics @ TJ = 25ºC
0
5
10
15
20
25
30
35
40
00.5
1
1.5
22.5
3
3.5
44.5
VCE - Volts
VGE = 25V
19V
15V
13V
11V
7V
6V
9V
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
0
40
80
120
160
200
240
0
5
10
15
20
25
30
VCE - Volts
VGE = 25V
21V
19V
13V
11V
9V
15V
7V
17V
Fig. 3. Output Characteristics @ TJ = 125ºC
0
5
10
15
20
25
30
35
40
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
VCE - Volts
VGE = 25V
21V
17V
15V
13V
11V
5V
7V
9V
6V
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VGE = 15V
I C = 40A
I C = 20A
I C = 10A
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
2
3
4
5
6
7
8
6
7
8
9
10
11
12
13
14
15
VGE - Volts
I C = 40A
TJ = 25ºC
20A
10A
Fig. 6. Input Admittance
0
10
20
30
40
50
60
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
VGE - Volts
TJ =125ºC
25ºC
- 40ºC



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