2PD2150 datasheet(1/11 Pages) PHILIPS

Part #	2PD2150

Description	20 V, 3 A NPN low VCEsat transistor

PDF	11 Pages

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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1.

Product proﬁle

1.1 General description

NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/

TO-243) SMD plastic package.

PNP complement: 2PB1424.

1.2 Features

s Low collector-emitter saturation voltage VCEsat

s High collector current capability: IC and ICM

s High collector current gain (hFE) at high IC

s High efﬁciency due to less heat generation

s Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

s DC-to-DC conversion

s MOSFET gate driving

s Motor control

s Charging circuits

s Power switches (e.g. motors, fans)

s Thin Film Transistor (TFT) backlight inverter

1.4 Quick reference data

2PD2150

20 V, 3 A NPN low VCEsat (BISS) transistor

Rev. 01 — 22 April 2005

Product data sheet

Table 1:

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCEO

collector-emitter voltage

open base

-

20

V

ICM

peak collector current

single pulse;

tp ≤ 1ms

--3

A

hFE

DC current gain

VCE =2V;

IC = 0.1 A

180

-

390

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