71321LA55PFG datasheet(10/18 Pages) IDT

10 / 18 page

6.42

IDT71321SA/LA and IDT71421SA/LA

High Speed 2K x 8 Dual-Port Static RAM with Interrupts

Industrial and Commercial Temperature Ranges

T im ing Wa ve for m of Writ e Cycle N o. 2 , (CE Cont rolle d T im ing)(1,5)

T im ing Wa ve for m of Writ e Cycle N o. 1 , (R/W Cont rolle d T im ing)(1,5,8)

NOTES:

1. R/W or CE must be HIGH during all address transitions.

2. A write occurs during the overlap (tEW or tWP) of CE = VIL and R/W= VIL.

3. tWR is measured from the earlier of CE or R/W going HIGH to the end of the write cycle.

4. During this period, the l/O pins are in the output state and input signals must not be applied.

5. If the CE LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the High-impedance state.

6. Timing depends on which enable signal (CE or R/W) is asserted last.

7. This parameter is determined to be device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test

Load (Figure 2).

8. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off data to be

placed on the bus for the required tDW. If OE is HIGH during a R/W controlled write cycle, this requirement does not apply and the write pulse can be as short

as the specified tWP.

ADDRESS

R/W

DATA OUT

DATA IN

(4)

2691 drw 08

tWC

tAS

(6)

tWR

(3)

tOW

tDW

tDH

tAW

tWP

(2)

tHZ

(7)

tWZ

(7)

tHZ

(7)

tWC

ADDRESS

R/W

DATAIN

tAS

(6)

tEW

(2)

tWR

tDW

tDH

tAW

2691 drw 09

(3)

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