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M29W008ET Datasheet(PDF) 19 Page - STMicroelectronics |
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M29W008ET Datasheet(HTML) 19 Page - STMicroelectronics |
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19 / 43 page ![]() M29W008ET, M29W008EB 4 Command interface 19/43 Table 4. Program, Erase Times and Program, Erase Endurance Cycles Parameter Min Typ(1)(2) 1. Typical values measured at room temperature and nominal voltages. 2. Sampled, but not 100% tested. Max(2) Unit Chip Erase 12 60(3) 3. Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles. s Block Erase (64 KBytes) 0.8 6(4) 4. Maximum value measured at worst case conditions for both temperature and VCC. s Erase Suspend Latency Time 15 25(3) µs Program (Byte) 10 200(3) µs Chip Program (Byte by Byte) 12 60(3) s Program/Erase Cycles (per Block) 100,000 cycles Data Retention 20 years |
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