M58WR032FB datasheet(62/86 Pages) STMICROELECTRONICS

62 / 86 page

M58WR032FT, M58WR032FB

62/86

Table 32. CFI Query System Interface Information

Offset

Data

Description

Value

1Bh

0017h

VDD Logic Supply Minimum Program/Erase or Write voltage

bit 7 to 4 BCD value in volts

bit 3 to 0 BCD value in 100 millivolts

1.7V

1Ch

0020h

VDD Logic Supply Maximum Program/Erase or Write voltage

bit 7 to 4 BCD value in volts

bit 3 to 0 BCD value in 100 millivolts

1Dh

00B4h

VPP [Programming] Supply Minimum Program/Erase voltage

bit 7 to 4 HEX value in volts

bit 3 to 0 BCD value in 100 millivolts

11.4V

1Eh

00C6h

VPP [Programming] Supply Maximum Program/Erase voltage

bit 7 to 4 HEX value in volts

bit 3 to 0 BCD value in 100 millivolts

12.6V

1Fh

0004h

Typical time-out per single byte/word program = 2n µs

16µs

20h

0000h

Typical time-out for multi-Byte programming = 2n µs

21h

000Ah

Typical time-out per individual block erase = 2n ms

22h

0000h

Typical time-out for full chip erase = 2n ms

23h

0003h

Maximum time-out for word program = 2n times typical

128µs

24h

0000h

Maximum time-out for multi-Byte programming = 2n times typical

25h

0002h

Maximum time-out per individual block erase = 2n times typical

26h

0000h

Maximum time-out for chip erase = 2n times typical

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