SMA4F12AH - SMA4F60AH

Taiwan Semiconductor

2

Version: A1805

THERMAL PERFORMANCE

PARAMETER

SYMBOL

TYP.

UNIT

Junction-to-lead thermal resistance per diode

20

°C/W

Junction-to-ambient thermal resistance per diode

62

°C/W

Junction-to-case thermal resistance per diode

16

°C/W

Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board)

Part number

Marking

code

Breakdown

voltage

(V)

(Note 1)

Test

current

(mA)

Working

stand-off

voltage

(V)

Maximum

blocking

leakage

current

(µA)

(Note 1)

Maximum

peak impulse

current

(A)

tp =10/1000 μs

Maximum

clamping

voltage

(V)

Min.

Max.

SMA4F12AH

4F012

13.4

14.8

1

12

1

20.5

19.5

SMA4F15AH

4F015

16.8

18.5

1

15

1

16.4

24.4

SMA4F18AH

4F018

20.1

22.2

1

18

1

13.7

29.2

SMA4F20AH

4F020

22.4

24.7

1

20

1

12.3

32.5

SMA4F21AH

4F021

23.5

25.9

1

21

1

11.7

34.1

SMA4F22AH

4F022

24.6

27.2

1

22

1

11.2

35.7

SMA4F24AH

4F024

26.8

29.6

1

24

1

10.3

39.0

SMA4F25AH

4F025

27.9

30.9

1

25

1

9.9

40.6

SMA4F26AH

4F026

29.1

32.1

1

26

1

9.5

42.2

SMA4F30AH

4F030

33.5

37.1

1

30

1

8.2

48.7

SMA4F33AH

4F033

36.9

40.8

1

33

1

7.5

53.6

SMA4F36AH

4F036

40.2

44.5

1

36

1

6.8

58.4

SMA4F39AH

4F039

43.6

48.2

1

39

1

6.3

63.3

SMA4F40AH

4F040

44.7

49.4

1

40

1

6.2

64.9

SMA4F43AH

4F043

48.1

53.1

1

43

1

5.7

69.8

SMA4F47AH

4F047

52.5

58.1

1

47

1

5.2

76.3

SMA4F51AH

4F051

57.0

63.0

1

51

1

4.8

82.8

SMA4F56AH

4F056

62.6

69.2

1

56

1

4.4

90.9

SMA4F60AH

4F060

67.1

74.1

1

60

1

4.1

97.4

Note:

1.

Pulse test with PW=30 ms