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SMA4F26AH Datasheet(PDF) 4 Page - Taiwan Semiconductor Company, Ltd |
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SMA4F26AH Datasheet(HTML) 4 Page - Taiwan Semiconductor Company, Ltd |
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4 / 6 page ![]() SMA4F12AH - SMA4F60AH Taiwan Semiconductor 4 Version: A1805 CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Pulse Power or Current vs. Initial Junction Temperature Fig.2 Steady State Power Derating Fig.3 Clamping Power Pulse Waveform Fig.4 Typical Junction Capacitance Fig.5 Typical Transient Thermal Impedance 0 25 50 75 100 0 25 50 75 100 125 150 175 0 1 2 3 4 5 6 7 8 0 25 50 75 100 125 150 175 Heat sink 5mm x 5mm Cu pad test board 0 20 40 60 80 100 120 140 160 0 0.5 1 1.5 2 2.5 3 t d Peak value I PPM Rise time tr=10μs to 100% of I PPM Half value-I PPM/2 10/1000μs waveform Pulse width(td) is defined as the point where the peak current decays to 50% of I PPM 10 100 1000 1 10 100 f=1.0MHz Vsig=50mVp-p SMA4F12AH SMA4F30AH SMA4F60AH 0.0001 0.001 0.01 0.1 1 10 100 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) REVERSE VOLTAGE (V) LEAD TEMPERATURE (°C) TJ - INITAL TEMPERATURE (°C) PULSE DURATION (s) |
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