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SS120 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # SS120
Description  1A, 200V Surface Mount Schottky Barrier Rectifier
PDF  5 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

SS120 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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SS120
Taiwan Semiconductor
1
Version:A1701
1A, 200V Surface Mount Schottky Barrier Rectifier
FEATURES
● Low power loss, high efficiency
● Ideal for automated placement
● Guar ding for over-voltage protection
● High surge current capability
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● Lighting application
● converter
MECHANICAL DATA
● Case: DO-214AC (SMA)
● Molding compound meets UL 94V-0 flammability rating
● Moisture sensitivity level: level 1, per J-STD-020
● Part no. with suffix “H” means AEC-Q101 qualified
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.066 g (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
IF(AV)
1
A
VRRM
200
V
IFSM
40
A
TJ MAX
150
°C
Package
DO-214AC(SMA)
Configuration
Single Die
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A = 25°C unless otherwise noted)
PARAMETER
SYMBOL
SS120
UNIT
Marking code on the device
SS120
Repetitive peak reverse voltage
VRRM
200
V
Reverse voltage, total rms value
VR(RMS)
140
V
Forward current
IF(AV)
1
A
Surge peak forward current, 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
40
A
Critical rate of rise of off-state voltage
dV/dt
10000
V/µs
Junction temperature
TJ
-55 to +150
°C
Storage temperature
TSTG
-55 to +150
°C


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