IRF7338

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9

Fig 24. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 23. Typical Capacitance Vs.

Drain-to-Source Voltage

P-Channel

Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

-

1

10

100

-VDS, Drain-to-Source Voltage (V)

0

200

400

600

800

Coss

Crss

Ciss

VGS = 0V,

f = 1 MHZ

C iss

= C gs + C gd , C ds

SHORTED

Crss

= Cgd

Coss = Cds + Cgd

0

2

468

10

QG Total Gate Charge (nC)

0

2

4

6

8

10

12

VDS= -9.6V

VDS= -6.0V

ID= -2.9A

0.1

1

10

100

0.00001

0.0001

0.001

0.01

0.1

1

10

Notes:

1. Duty factor D =

t / t

2. Peak T

= P

x Z

+ T

1

2

J

DM

thJA

A

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

1

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)