NLSF457 datasheet(4/8 Pages) ONSEMI

4 / 8 page

NLSF457

www.onsemi.com

DC ELECTRICAL CHARACTERISTICS

Conditions

VCC (V)

TA = 25°C

TA = −55°C to +125°C

Symbol

Parameter

Min

Typ

Max

Min

Max

Unit

VIH

High−Level

Input Voltage

1.65 to 1.95

0.65 x VCC

−

0.65 x VCC

−

2.3 to 5.5

0.70 x VCC

−

0.70 x VCC

−

VIL

Low−Level

Input Voltage

1.65 to 1.95

−

0.35 x VCC

−

0.35 x VCC

2.3 to 5.5

−

0.30 x VCC

−

0.30 x VCC

VOH

High−Level

Output Voltage

VIN = VIH or VIL

IOH = −100 mA

IOH = −4 mA

IOH = −8 mA

IOH = −12 mA

IOH = −16 mA

IOH = −24 mA

IOH = −32 mA

1.65 to 5.5

1.65

2.3

2.7

3.0

4.5

VCC – 0.1

1.29

1.9

2.2

2.4

2.3

3.8

VCC

1.4

2.1

2.4

2.7

2.5

4.0

−

VCC – 0.1

1.29

1.9

2.2

2.4

2.3

3.8

−

VOL

Low−Level

Output Voltage

VIN = VIH or VIL

IOL = 100 mA

IOL = 4 mA

IOL = 8 mA

IOL = 12 mA

IOL = 16 mA

IOL = 24 mA

IOL = 32 mA

1.65 to 5.5

1.65

2.3

2.7

3.0

4.5

−

0.08

0.2

0.22

0.28

0.38

0.42

0.1

0.24

0.3

0.4

0.55

−

0.1

0.24

0.3

0.4

0.55

IIN

Input Leakage

Current

VIN = 5.5 V or

GND

1.65 to 5.5

−

±0.1

−

±1.0

IOFF

Power Off

Leakage Current

VIN = 5.5 V or

VOUT = 5.5 V

−

1.0

−

ICC

Quiescent

Supply Current

VIN = VCC or GND

5.5

−

1.0

−

AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 nS)

Conditions

VCC (V)

TA = 25°C

TA = −55°C to +125°C

Symbol

Characteristic

Min

Typ

Max

Min

Max

Unit

tPLH,

tPHL

Propagation Delay,

A to Y

(Figures 3 and 4)

RL = 1 MW, CL = 15 pF

1.65 to 1.95

−

7.7

−

10.5

RL = 1 MW, CL = 15 pF

2.3 to 2.7

−

4.2

7.5

−

8.0

RL = 1 MW, CL = 15 pF

3.0 to 3.6

−

3.0

5.2

−

5.5

RL = 500 W, CL = 50 pF

−

3.5

5.7

−

6.0

RL = 1 MW, CL = 15 pF

4.5 to 5.5

−

2.3

4.5

−

4.8

RL = 500 W, CL = 50 pF

−

2.6

5.0

−

5.3

CAPACITAVE CHARACTERISTICS (Input tr = tf = 3.0 nS)

Symbol

Parameter

Test Condition

Typical (TA = 25 5C)

Unit

CIN

Input Capacitance

VCC = 5.5 V, VIN = 0 V or VCC

2.5

COUT

Output Capacitance

VCC = 5.5 V, VIN = 0 V or VCC

2.5

CPD

Power Dissipation Capacitance (Note 5)

10 MHz, VCC = 3.3 V, VIN = 0 V or VCC

10 MHz, VCC = 5.5 V, VIN = 0 V or VCC

5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without

load. Average operating current can be obtained by the equation ICC(OPR) = CPD S VCC S fin + ICC. CPD is used to determine the no−load

dynamic power consumption: PD = CPD S VCC2 S fin + ICC S VCC.

NLSF457 Datasheet(PDF) 4 Page - ON Semiconductor

NLSF457 Datasheet(HTML) 4 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL