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HERF1007GA Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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HERF1007GA Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 4 page  HERF1007GA - HERF1008GA CREAT BY ART - High efficiency, low VF - High current capability - High surge current capability - Low power loss - Halogen-free according to IEC 61249-2-21 Molding compound, UL flammability classification rating 94V-0 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test VRRM V VRMS V VDC V IF(AV) A trr ns CJ pF RθJC °C/W TJ °C TSTG °C Version: A1511 800 Taiwan Semiconductor 10A, 800V - 1000V Isolated Glass Passivated High Efficient Rectifiers FEATURES - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 1.7 HERF 1008GA HERF 1007GA 1000 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL ITO-220AB MECHANICAL DATA Case: ITO-220AB Polarity: As marked Mounting torque: 0.56 Nm max. Weight: 1.82 g (approximately) UNIT Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 10 700 1000 800 560 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 125 A Maximum instantaneous forward voltage (Note 1) @ 5 A VF V Maximum reverse current @ rated VR TJ=25°C IR 10 μA TJ=125°C 400 Maximum reverse recovery time (Note 2) Typical junction capacitance (Note 3) Typical thermal resistance 3 40 80 Operating junction temperature range - 55 to +150 Storage temperature range - 55 to +150 Note 1: Pulse test with PW=300μs, 1% duty cycle Note 2: Test conditions: IF=0.5A, IR=1.0A, IRR=0.25A. Note 3: Measured at 1 MHz and applied reverse voltage of 4.0 V DC. |
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