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SDT3585S Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SDT3585S Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 7 page  Elektronische Bauelemente SDT3585S & P-Ch Enhancement Mode MOSFET -Ch: 5A, 20V, RDS(O ) 37 mΩ Ω Ω Ω P-Ch: -3.5A, -20V, RDS(O ) 75 mΩ Ω Ω Ω 12-Sep-2017 Rev. A Page 1 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SDT3585S is the highest performance trench N+P MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The SDT3585S meet the RoHS and Green Product requirement with full function reliability approved. APPLICATIONS Power Management In Note Book Portable Equipment DC/DC Converter Load Switch MARKING PACKAGE INFORMATION ABSOLUTE MAXIMUM RATINGS (T A=25°C unless otherwise specified) Rating Parameter Symbol N-ch P-ch Unit Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±12 ±12 V TA=25°C 5 -3.5 A Continuous Drain Current 1 @V GS=4.5V TA=70°C ID 4 -2.8 A Pulsed Drain Current 3 IDM 17 -12 A Total Power Dissipation TA=25°C PD 1.5 W Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Data t 5sec ,83 ≦ °C / W Maximum Thermal Resistance from Junction to Ambient 1 Steady State , 125 °C / W Maximum Thermal Resistance from Junction to Ambient 2 RθJA 250 °C / W Maximum Thermal Resistance from Junction to Case 1 RθJC 8.4 °C / W Package MPQ Leader Size DFN2×2-6L-J 3K 7 inch DFN2x2-6L-J Millimeter Millimeter REF. Min. Typ. Max. REF. Min. Typ. Max. A 2.00 BSC. G 0.30 BSC B 2.00 BSC. H 0.20 BSC - C 0.675 0.75 0.80 J 0 - 0.06 D 0.30 Typ. K 0.15 0.20 0.25 E 0.75 0.86 1.1 L 0.20 0.30 0.38 F 0.65BSC P 0.52 0.65 0.72 3585S . |
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