SDT3585S datasheet(3/7 Pages) SECOS

3 / 7 page

Elektronische Bauelemente

SDT3585S

& P-Ch Enhancement Mode MOSFET

-Ch: 5A, 20V, RDS(O ) 37 mΩ

Ω

P-Ch: -3.5A, -20V, RDS(O ) 75 mΩ

Ω

12-Sep-2017 Rev. A

Page 3 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

P-CH ELECTRICAL CHARACTERISTICS (T

J=25°C unless otherwise specified)

Parameter

Symbol

Min

Typ

Max

Unit

Test Condition

Drain-Source Breakdown Voltage

BVDSS

-20

VGS=0, ID= -250µA

Breakdown Voltage Temperature

Coefficient

△

DSS/

△

-0.01

V/°C

Reference to 25°C,ID= -1mA

Gate-Threshold Voltage

VGS(th)

-0.5

-1.2

VDS=VGS, ID= -250µA

Forward Transfer conductance

gFS

VDS= -5V, ID= -3A

Gate-Body Leakage Current

IGSS

±100

VDS=0,VGS= ±12V

-1

VDS= -16V, VGS=0,TJ=25°C

Zero Gate Voltage Drain Current

IDSS

-5

µA

VDS= -16V, VGS=0,TJ=55°C

VGS= -4.5V, ID= -3A

Drain-Source On-Resistance

RDS(ON)

105

VGS= -2.5V, ID= -2A

Total Gate Charge

9.7

Gate-Source Charge

Qgs

2.05

Gate-Drain Charge

Qgd

2.43

VDS= -15V

VGS= -4.5V

ID= -3A

Turn-On Delay Time

Td(ON)

4.8

Rise Time

9.6

Turn-Off Delay Time

Td(OFF)

Fall Time

8.4

VDS= -10V

VGS= -4.5V

ID= -3A

RG=3.3

RD=3.33

Input Capacitance

Ciss

686

Output Capacitance

Coss

90.8

Reverse Transfer Capacitance

Crss

80.4

VDS= -15V

VGS=0

f=1MHz

Source-Drain Diode

Continuous Source Current

-3.5

Pulsed Source Current

ISM

-12

Forward On Voltage

VSD

-0.7

-1.2

IS= -1A, VGS=0V

Reverse Recovery Time

Trr

8.4

Reverse Recovery Charge

Qrr

3.3

IS= -3A,VGS=0V,

dI/dt=100A/µs

Notes:

Surface mounted on a 1 inch

2 FR-4 board with 2OZ copper.

Surface mounted on FR4 Board using the minimum recommended pad size

Pulse width limited by maximum junction temperature

The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%

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