SSG4501-C datasheet(3/9 Pages) SECOS

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SSG4501-C

N & P-Ch Enhancement Mode Power MOSFET

N-Ch: 7A, 30 V, RDS(ON) 28m

Ω

P-Ch: -5.3A, -30 V, RDS(ON) 50m

Ω

Elektronische Bauelemente

06-Dec-2018 Rev. B

Page 3 of 9

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

P-CHANNEL ELECTRICAL CHARACTERISTICS (T

J=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

-30

VGS=0, ID= -250uA

Breakdown Voltage Temp. Coefficient

△BVDS/△TJ

-0.028

V/°C

Reference to 25°C , I D= -1mA

Gate Threshold Voltage

VGS(th)

-1

-3

VDS=VGS, ID= -250uA

Forward Transfer conductance

gfs

8.5

VDS= -10V, ID= -5.3A

Gate-Source Leakage Current

IGSS

±100

VGS=±20V

Drain-Source Leakage Current

TJ=25°C

IDSS

-1

VDS= -30V, VGS=0

TJ=75°C

-25

V DS= -24V, VGS=0

Static Drain-Source On-Resistance 2

RDS(ON)

VGS= -10V, ID= -5.3A

VGS= -4.5V, ID= -4.2A

Total Gate Charge

ID= -5.3A

VDS= -15V

VGS= -10V

Gate-Source Charge

Qgs

3.5

Gate-Drain (“Miller”) Change

Qgd

Turn-on Delay Time

Td(on)

VDS= -15V

VGS= -10V

ID= -1A

RG=6

RD=15

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

Input Capacitance

Ciss

790

VGS=0

VDS= -15V

f=1.0MHz

Output Capacitance

Coss

440

Reverse Transfer Capacitance

Crss

120

Source-Drain Diode

Forward On Voltage 2

VSD

-1.2

IS= -2.6A, VGS=0V, TJ=25°C

Continuous Source Current (Body Diode)

-1.67

VD=VG=0V,VS= -1.2V

Notes:

Pulse width limited by Max. Junction temperature.

Pulse width

300us , duty cycle

Surface mounted on 1 inch2 copper pad of FR4 board; 135 °C/W when mounted on min. copper pad.

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