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SSG6618-C Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG6618-C Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  SSG6618-C 7.3A, 30V, RDS(ON) 18m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 16-Jan-2018 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 6618SC = Date Code A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG6618-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSG6618-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge MARKING PACKAGE INFORMATION Package MPQ Leader Size SOP-8 2.5K 13 inch ORDER INFORMATION ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1, @V GS=10V TA = 25°C ID 7.3 A TA = 70°C 5.8 Pulsed Drain Current 3 IDM 37 A Total Power Dissipation TA = 25°C PD 1.5 W Operating Junction & Storage Temperature Range TJ, TSTG -55~150 °C Thermal Data Thermal Resistance Junction-Ambient 1 RθJA 85 °C/W Thermal Resistance Junction-Ambient 2 125 Thermal Resistance Junction-Case 1 RθJC 25 Part Number Type SSG6618-C Lead (Pb)-free and Halogen-free SOP-8 G S S S D D D D REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 5.79 6.20 H 0.33 0.51 B 4.70 5.11 J 0.375 REF. C 3.80 4.00 K 45°REF. D 0° 8° L 1.3 1.752 E 0.40 1.27 M 0 0.25 F 0.10 0.25 N 0.25 REF. G 1.27 TYP. |
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