SSG6618-C

N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente

16-Jan-2018 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Drain-Source Breakdown Voltage

30

-

-

V

Gate Threshold Voltage

1

-

2.5

V

Forward Transconductance

-

6

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage

Current

-

-

1

µA

-

-

5

µA

Static Drain-Source On-Resistance

4

-

-

18

m

-

-

28

Total Gate Charge

-

6

-

nC

Gate-Source Charge

-

2.5

-

Gate-Drain Charge

-

2.1

-

Turn-on Delay Time

-

2.4

-

nS

Rise Time

-

7.8

-

Turn-off Delay Time

-

22

-

Fall Time

-

4

-

Input Capacitance

-

572

-

pF

f=1MHz

Output Capacitance

-

80

-

Reverse Transfer Capacitance

-

65

-

Source-Drain Diode

Continuous Source Current

1

-

-

7.3

A

Pulsed Source Current

3

-

-

37

A

Forward on Voltage

4

-

-

1.2

V

Reverse Recovery Time

-

20

-

nS

dl/dt=100A/µs

Reverse Recovery Charge

-

1.1

-

nC

Notes:

1

Surface mounted on a 1 inch

2

When mounted on Min. Copper pad.

3

Pulse width limited by maximum junction temperature, pulse width≦300µs, duty cycle≦2%.

4

The data tested by pulsed, pulse width≦300µs, duty cycle≦2%.